When Gate-all-around manufacturing challenges were being considered, high-K metal gate, strained silicon, and FinFET technologies were also available.

“... we, we knew of this idea, but we knew there was these-- gonna be these problems on, on how you put this into high-volume manufacturing. And at the same time, there's other things like high K metal gate, there's, uh, strained silicon, there's FinFETs that are out there.”